Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation.
In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs, etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm, etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width.
Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, material science, chemistry and molecular biology and other related fields.
|Excitation wavelength options||325nm, 405nm, 442nm, 473nm, 532nm, 633nm, 785nm, etc.|
|Detector #1||Type: Cooled CCD (2000x256)|
|Spectral range: 300-1000nm|
|Detector #2||Type: Cooled InGaAs (512x1)|
|Spectral range: 800-1700nm|
|Detector #3||Cooled InGaAs (512x1)|
|Spectral range: 800-2200nm|