Lasers & Optical Fibers Technologies
Solar Cell QE Measurement System (Omni-Station) / Spectrometer systems
Omni-Station series is a multifunctional experimental platform which is based on Quantum Efficiency (QE) measurement
Solar Cell QE Measurement System (Omni-Station) summary
The system employs a turnkey integrated design, which can carry out the QE, Reflectivity, Mapping testing functions automatically. There are also Modularization Design special accessories to adapt to different solar cell samples.
- Solar cell materials: Monocrystal silicon, polycrystalline silicon, α-Si, GaAs, GaInP, InP, Ge, CdTe, CIS, CIGS, DSSC, Organic Solar Cell, Polymer Solar Cell
- Solar cell structures: single junction, multi-junction, HIT, thin film, HPV and so on.
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- Consistent with IEC 60904-8 international Standards
- High Repeatability tests results
- High automatization measurement
- Optional double light path intensity monitoring function
- Fast Mapping function 20pts/s
- Import parameters quickly
- Crystalline Silicon Solar Cell Measurement
- α-i Solar Cell Measurement
- Dye Sensitized Solar Cell Measurement
- Copper Indium Gallium Selenide Solar Cell Measurement
| Model | Description |
| OS-T150 | 150W Xenon arc lamp for probe source, optical stability ≦0.8% |
| Adjust mechanism: It can easy remove chopper (not included) from probe light | |
| Monochromic light wavelength range : 400-2000nm, with three gratings | |
| OS-X150 | 150W Tungsten-halogen light source for probe source, optical stability ≦0.8% |
| Adjust mechanism: It can easy remove chopper (not included) from probe light | |
| Monochromic light wavelength range: 400-2000nm, with three gratings | |
| Accessories | |
| QE-A3 | 75W Tungsten bias light source with shutter control |
| QE-A4 | 150W Tungsten bias light source with shutter control |
| QE-A5 | 150W Xenon bias light source with shutter control |
| QE-B2 | Calibrated InGaAs detector |
| QE-B3 | Calibrated Si detector |
| QE-C1 | Specular reflective measurement capability, Si detector 300-1100nm |
| QE-C2 | Integration sphere diffuse reflectance measurement capability |
| Dual detector 300-1600nm | |
| QE-D4 | Manual 3 axes stage for sample holder. XY Traveling 50x50mm traveling |
| and 5mm Z Axis | |
| OS-SD | Manual adjust dual filter wheel. Each wheel with 6 positions of 25mm |
| (Diameter) filter slot | |
| OS-SDND (with neutral density filter set) | Filter 1 OD: 0.1, 0.2,0.4, 0.8, 1 ; Filter 2 OD: 0.1, 0.3, 0.4, 0.8,2 |
| OS-TVISD4 | Transmission measurement set for 350-1000nm. Mount on QE-D4 only |
| OS-AC | SR540 chopper installed in probe light source lamp housing |
| SR810 lock-in amplifier | |
| QE-F4 | 30x30mm sample holder for electrode on both side |
| QE-F5 | Vacuum sample clamp & thermoelectric temperature test fixture |
| QE-F6-C | Sample holder for electrode on back side |
| QE-C7 | Standard diffuse reflection plate |
| QE-D1 | XY motorized stage |
| QE-D2 | XYZ manual stage |
| QE-IV-Convertor | Short current amplifier |
- Full spectrum sunlight simulation, optional double light sources, high-light intensity, and high-stability
The system conforms to the IEC 60904 standard and has dual light sources using the Xenon and Tungsten Halogen lamp to cover the whole spectrum. For different wavelength range, choose the right light source to complete QE measurement. The output light intensity from these lamps remain stable over time to ensure a high level of repeatability in the measurement.
- Test results of high repeatability
The stability of the light source, monochromator high wavelength accuracy and repeatability, the design of optical path, sample of clamping, data acquisition ways to ensure the system with high repeatability of the test result.
- Software functions
The Omni-Station utilises a single windows interface in which all device parameters can be set. All control parameters can be saved as method files and reloaded at any time to resolve the measurement conditions. These method files can also be transferred between instruments to allow experiment replication. Measured and processed data can be saved and exported in text, Excel or other formats for processing user supplied programmes.
- Fast Mapping function
QE Mapping / Reflectivity Mapping: this function is mainly for a cell area of more than 100x100mm. The user could obtain the minority carrier diffusion length and defect distribution information.
- QE Mapping
- Reflectivity Mapping
This function is mainly for a cell area of more than 100×100 mm. The user could obtain the minority carrier diffusion length and defect distribution information.
The above three Mapping data sets are obtained from the one cell at 400nm, 650nm and 950nm wavelength by scanning QE (LBIC). For the 650nm and 950nm maps, the QE data shows that the cell uniformity is better than at 400nm. For the 400nm data, the sample uniformity is obviously bad around the edge. By using different wavelengths of light the user can prove different incident depths within the silicon cell. The longer the incident light wavelength the further into the silicon cell the light will penetrate thus allowing depth profiling and examination of the inner depths of cells.
- High wavelength resolution transmittance spectrum measurement
- Diffuse reflectivity measurement
- Fast measurement of QE & linearity @ wavelength
- Spectral response of detector measurement
Sample holders : we have developed many different professional sample holders according to different samples & applications:
- QE-F4: sample holder for DSSC, CIGS, GaN, GaAs, Crystalline Si Solar Cell, Semiconductor Solar Cell
- QE-F6: sample holder for α-Si, organic solar cell
- QE-F6-G: sample holder for α-Si, organic solar cell (with nitrogen circulation)